At PCIM, there is a Hell of a lot of GaN. But who does it best? And why would you want to use this technology? Cambridge GaN Devices was kind enough to explain that to us in the simplest terms. Best of all, this GaN is much easier to integrate…
At PCIM 2024, ipXchange caught up with Nare and Peter from Cambridge GaN Devices to learn more about dynamic transient voltages on the gate terminal and how Cambridge GaN Devices builds its Gallium Nitride (GaN) ICs to handle these spikes much better than alternative technologies.
GaN is seeing adoption in many industries due to the higher switching frequencies and lower switching losses when compared to silicon. This increases the efficiency of power circuits and shrinks them, enabling much higher power density in compact products.
A key benefit of Cambridge GaN Devices’ integrated approach is that it can withstand much higher transient voltages than discrete GaN components. This is at a level comparable to silicon and silicon carbide MOSFETs and IGBTs, resulting in much better transient voltage protection throughout your circuitry.
The unreliability of voltages coming from outside a system – such as from the grid – is a cause for concern if you want to ensure the longevity of a product. More accurately, this is the AC-DC or DC-DC converter architecture within a design.
The beauty of Cambridge GaN Device’s power transistors is that you can drive them like a MOSFET, without the need for specialised gate drivers. Typically, you only need to add a single capacitor, making ‘Cambridge GaN’ much easier to design in than alternative solutions.
Peter also highlights that this ease of integration further shrinks the footprint of GaN power circuits as there are fewer components required. The miller clamp further reduces component count by eliminating the need for a negative power rail.
There is plenty more that can be said in Cambridge GaN Devices’ favour – such as no reverse recovery charge or reverse conduction losses – so the best way to learn more is to get connected to learn more about this exciting technology.
Check out the specs of one of these devices by following the link to the board form below. There, you can apply for a consultation with Cambridge GaN Devices to discuss the best solution for your commercial project.
Keep designing!
Love Cambridge GaN Devices? Check out ipXchange’s interview from PCIM 2023:
The next generation of energy-efficient GaN HEMTs, now with 1/10th the no-load consumption