Magneto-resistive Random Access Memory (MRAM) stores data using magnetic polarisation rather than electric charge, which brings the MRAM unlimited read/write endurance and Single Event Upset (SEU) immune characteristics.
3D PLUS’s Radiation Tolerant MRAM is available in a variety of temperature ranges and stacks of 1 Mb to 64 Mb organised x8, x16, x32, and x40 with a power supply of 3.3 V and a clock rate / access time of 40 ns. These components have a proven lifetime for 15- to 18-year space missions (specified at 20 years data retention) and have the following radiation tolerance characteristics: TID >50 krad(Si) and SEL >85 MeV.cm3/mg. While there is no pure tin guarantee, 3D PLUS is willing to guarantee less than 97% tin.
3D PLUS’s Radiation Tolerant MRAM devices are offered with a standard SOP footprint for high-resistance SMT assembly and for withstanding harsh thermal and mechanical environments. 3D PLUS MRAM products are used as a processor’s boot and program ROM and FPGA configuration memory in applications spanning sciences and deep space missions, earth observations, navigation, launchers and manned space vehicles, and telecommunications satellites.
(All images sourced from 3D PLUS)
