Innoscience 100 V GaN-on-Silicon Enhancement-Mode Power Transistor Samples and Reference Designs

Innoscience’s 100 V GaN e-Mode HEMTS are well suited for synchronous rectification, audio class D amplifiers, high frequency DC/DC converters, communication base stations, motor drivers, and many other power applications.

These highly reliable devices feature low gate voltages, ultra-low on resistance, and zero reverse recovery charge. The INN100W070A and INN100W032A HEMTs come in a compact solder bar WLCSP package with the following main specifications – Further information is available in the accompanying datasheets:

Part numberFootprint (mm)RDS(On),Max
@ VGS = 5 V
IDS (A)Datasheet
INN100W070A2.5 x 1.5729 (Cont.)Link
INN100W032A3.5 x 2.133.2230 (Pulse)Link

Innoscience produces a number of full-bridge DC/DC convertor reference designs to evaluate this technology for use in datacentre, telecom, industrial, high-performance computing/AI, and energy storage applications. These exhibit power densities of >2000 W/in3 with marked efficiency and space-saving over silicon-based equivalent designs; the 48 V to 12 V, 600 W, 1 MHz power module is just 36 x 26 x 7 mm, and the 48 V to 4.8 V, 420 W, 1 MHz power module is 26 x 19.5 x 6 mm.

If you would like to evaluate Innoscience’s 100 V GaN technology for use in a commercial application, fill out the form below, and ipXchange will put you in touch to discuss your project requirements.

Please note that another 48 V to 12 V, 1000 W, 1 MHz DC/DC power module is available from Innoscience, and this uses their SolidGaN technology, which does not require the use of external drivers. This reference design is just 39 x 26 x 7.5 mm and exhibits >97% full-load efficiency and a power density of 2150 W/in3. If this reference design is of interest to you for use in a commercial project, use this same application form while specifying your preference in this option.

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