Transphorm’s 2.5 kW bridgeless totem-pole power factor correction (PFC) evaluation platform provides designers with an easy-to-use configuration to test the performance and efficiency of Transphorm’s SuperGaN FETs for single-phase AC-DC conversion in power supplies for datacentre and industrial applications. This design features a switching frequency of 66 kHz and Microchip’s dsPIC to further improve efficiency.
This platform uses Transphorm’s TP65H050G4BS 650 V 50 mΩ SuperGaN FET, which are available in a TO-263 package with a source tab. These devices are an innovative fusion of state-of-the-art GaN HEMT technology and low-voltage silicon MOSFET technology, which creates a GaN solution with superior reliability over competitor alternatives.The main benefits of Transphorm’s GaN is improved efficiency over silicon due to the reduced gate charge, crossover loss, and reverse recovery charge. This is illustrated in the key specifications of the device:
-> VDSS: 650 V
-> VDSS(TR): 800 V
-> RDS(On)eff max.: 60 mΩ
-> QRR typ.: 120 nC
-> QG typ.: 16 nC
Transphorm’s solution can be driven using commonly used gate drivers and allows for increased power density, increased efficiency in both hard- and soft-switched circuits, reduced system size and weight, and lower overall system cost in applications including data communications, industrial devices, PV inverters, and servo motor controllers.
The full datasheet for the TP65H050G4BS device can be found here, and a user guide for the evaluation platform can be found here.
If you’ve got a commercial project where you would like to evaluate Transphorm’s GaN, fill out the form below, and ipXchange will put you in touch to discuss your project and the best evaluation platform for your requirements.
