Transphorm’s 3.0 kW inverter evaluation kit provides designers with an easy-to-use platform to test the performance of Transphorm’s SuperGaN FETs for use in applications such as PV inverters, uninterruptable power supplies, and vehicle-to-grid units. The kit is customisable via firmware and provides the main features of a single-phase inverter, with a switching frequency of 50 kHz and a flat efficiency curve of greater than 98.5% when operating at over 500 W.
This platform uses Microchip’s dsPIC and four of Transphorm’s TP65H050G4WS 650 V 50 mΩ SuperGaN FETs in full bridge configuration. These devices are available in an industry-standard 3-lead TO-247 package (with source tab) for familiar PCB layout and high thermal efficiency. The SuperGaN FETs are an innovative fusion of state-of-the-art GaN HEMT technology and low-voltage silicon MOSFET technology, which creates a GaN solution with superior reliability over competitor alternatives. The main benefits of Transphorm’s GaN is improved efficiency over silicon due to the reduced gate charge, crossover loss, and reverse recovery charge. This is illustrated in the key specifications of the device:
-> VDSS: 650 V
-> VDSS(TR): 800 V
-> RDS(On)eff max.: 60 mΩ
-> QRR typ.: 125 nC
-> QG typ.: 16 nC
Transphorm’s solution can be driven using commonly used gate drivers and allows for increased power density, reduced system size and weight, and lower overall system cost in applications including data communications, industrial devices, PV inverters, and servo motor controllers.
The full datasheet for the TP65H050G4WS device can be found here, and a user guide for the evaluation platform can be found here.
If you’ve got a commercial project where you would like to evaluate Transphorm’s GaN, fill out the form below, and ipXchange will put you in touch to discuss your project and the best evaluation platform for your requirements.
