Innoscience 650 V GaN-on-Silicon Enhancement-Mode Power Transistor Samples and Reference Designs

Innoscience’s INN650D080BS is a GaN-on-silicon enhancement-mode power transistor which has normally-off power switch status and ultra-high switching frequency. The INN650D080BS exhibits no reverse-recovery charge, low gate charge, and low output charge. The key parameters of this device are as follows, as measured at a junction temperature of 25°C:

-> VDS (max.): 650 V
-> RDS(on) @ VGS = 6 V (max.): 80 mΩ
-> QG @ VDS = 400 V (typ.): 6.2 nC
-> ID: 29 A
-> ID,pulse: 58 A
-> Gate threshold voltage VGS(th): 1.2 – 2.5 V (1.7 V typ.)

The INN650D080BS is available in an 8 × 8 x 0.9 mm DFN package and is designed for use in AC-DC converters, DC-DC converters, BCM/DCM totem pole PFC, fast battery charging, high density power conversion, and high efficiency power conversion. Innoscience is happy to assist engineers developing solutions with their devices by designing demo board(s) for your application(s). Example reference designs include QR flybacks, bucks, boosts, LLCs, chargers, and more that are designed to serve e-mobility motor drives, solar inverters, EV fast chargers, datacentres, telecom PSUs, air conditioning units, LED lighting solutions, smart agriculture devices, and industrial applications.

If you are looking to evaluate Innoscience’s technology for use in a commercial application, fill out the form below, and ipXchange will put you in touch to discuss your project. Detailed information on Innoscience’s reference designs does not seem to be available online, but ipXchange can share what we know if you are interested in any of the reference designs mentioned in our interviews or other content that we have produced.

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