Cambridge GaN Devices’ second generation of enhancement mode GaN-on-silicon power transistors feature the same benefits of their previous GaN devices (high current delivery, high breakdown voltage, and high switching frequency)…
Featuring their ICeGaN™ technology, the CGD65A055S2 from Cambridge GaN Devices is an enhancement mode GaN-on-silicon power transistor, exploiting the unique material properties of GaN to deliver high current, high breakdown…
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