Everspin’s MR25H40 Magnetoresistive Random Access Memory (MRAM) products present an ideal solution for applications that require fast data operations using a minimum number of I/O pins. These devices operate on a 3.0-3.6 V supply and offer a read/write speed of 40 MHz. The MR25H40 family also features unlimited endurance, no delay between writes, and non-volatile data retention specified at over 20 years lifetime, with full protection in the event of power loss. A low-current sleep mode further supports energy-conscious operation in applications where access to this RAM is less frequent.
Unlike other serial memories, Everspin’s solution can both read and write randomly within the memory, which is organised as 524,288 8-bit words. This memory is also pin-compatible with serial SRAM, EEPROM, flash, and FeRAM products for direct replacement. The MR25H40 devices are available in a 5 x 6 mm, 8-pin DFN or 8-pin DFN small flag package for a variety of operating temperature ranges:
- Commercial (0°C to 70°C)
- Industrial (-40°C to 85°C)
- Extended (-40°C to 105°C)
- Automotive AEC-Q100 Grade 1 (-40°C to 125°C)
Everspin’s MR25H00-EVAL MRAM evaluation board allows engineers to test the MR25H40 as part of an Arduino-derived shield that will interface with any MCU host board that uses a standard UNO pinout. This is done via the SPI interface on pins D10 to D13, with HOLD and WP connected to D8 and D9.
If you would like to test Everspin’s MR25H40 for use in a commercial application, fill out the form below, and ipXchange can send you more information and put you in touch with Everspin to discuss your application requirements. For example, the MR20H40 is a 50 MHz version of the MR25H40 if you do not require as wide a temperature range but would benefit from faster memory access; this is another option for the MR25H00-EVAL board. Smaller densities are also available if your application does not require 4 Mb, so feel free to specify these sorts of points when you apply.