ElFys’ SM series of photodiodes features its patented Black Silicon nanotechnology, which enables ultra-efficient capture of incoming light from 400-1100 nm with a peak response at 970 nm.
For green, red, and NIR detection applications, such as in health monitoring (heartrate and blood oxygen saturation) and wearables, ElFys’ Black Silicon technology enables a greater than 50% increase in total light capture.
This increased sensitivity means that you can get more insights from a light-based sensor, run less power through a light source while gathering the same amount of data, or shrink the photodetector for the same insights in a more compact form factor.
The SM-series Black Silicon photodiodes have a maximum reverse voltage of 6 V and exhibit an extremely low dark current. The spectral sensitivity is shown in the diagram below:
These photodiodes are available in two SMD package options with an operating temperature from -40°C to +85°C:
- 3.2 x 2.0 x 0.6 mm with a 3.22 mm2 active photosensitive area
- 4.8 x 2.5 x 0.6 mm with a 4.66 mm2 active photosensitive area
Learn more about both devices in the official datasheets for the SM322 and SM446 Black Silicon photodiodes respectively.
If you would like to evaluate this technology for use in a commercial application, fill out the form below, and ipXchange will get you connected with ElFys to learn more.